Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...
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| Autor Corporativo: | |
| Formato: | Libro electrónico |
| Idioma: | Inglés |
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Vienna :
Springer Vienna
2011.
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| Colección: | Computational Microelectronics.
Springer eBooks. |
| Acceso en línea: | Conectar con la versión electrónica |
| Ver en Universidad de Navarra: | https://innopac.unav.es/record=b33050387*spi |
| Sumario: | Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given. |
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| Descripción Física: | XIV, 252 p., 101 il |
| Formato: | Forma de acceso: World Wide Web. |
| ISBN: | 9783709103821 |
