Physics of Nanostructured Solid State Devices

Physics of Nanostructured Solid State Devices introduces readers to theories and concepts such as semi-classical and quantum mechanical descriptions of electron transport, methods for calculations of band structures in solids with applications in calculation of optical constants, and other advanced...

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Detalles Bibliográficos
Autor principal: Bandyopadhyay, Supriyo (-)
Autor Corporativo: SpringerLink (-)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Boston, MA : Springer US 2012.
Colección:Springer eBooks.
Acceso en línea:Conectar con la versión electrónica
Ver en Universidad de Navarra:https://innopac.unav.es/record=b32714142*spi
Descripción
Sumario:Physics of Nanostructured Solid State Devices introduces readers to theories and concepts such as semi-classical and quantum mechanical descriptions of electron transport, methods for calculations of band structures in solids with applications in calculation of optical constants, and other advanced concepts.  The information presented here will equip readers with the necessary tools to carry out cutting edge research in modern solid state nanodevices. This book also: Covers sophisticated models of charge transport including the drift-diffusion model, Boltzmann transport model and various quantum transport models Discusses the essential elements of quantum mechanics necessary for an understanding of nanostructured solid state devices Presents band structure calculation methods based on time-independent perturbation theory Discusses theory of optical transitions and optical devices employing quantum-confined structures such as quantum wells,wires and dots Elucidates quantum mechanics of electrons in a magnetic field and associated phenomena Discusses mesoscopic device phenomena such as in resonant tunneling devices, Aharonov-Bohm interferometers and other mesoscopic structures Physics of Nanostructured Solid State Devices is ideal for a first year graduate student of electrical engineering and/or applied physics studying concepts that are critical to understanding the behavior of charge carriers (electrons and holes) in modern nanostructured solid state devices.    .
Descripción Física:XX, 552 p.
Formato:Forma de acceso: World Wide Web.
ISBN:9781461411413