Technology computer aided design : simulation for VLSI MOSFET

Technology computer aided design simulation for VLSI MOSFET

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...

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Detalles Bibliográficos
Otros Autores: Sarkar, Chandan Kumar (-)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Boca Raton : CRC Press 2013.
Edición:1st ed
Materias:
Integrated circuits > Very large scale integration > Computer-aided design.
Metal oxide semiconductor field-effect transistors > Computer-aided design.
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009628837406719
Tabla de Contenidos:
  • Front Cover; Contents; Preface; The Editor; Contributors; Chapter 1 - Introduction to Technology Computer Aided Design; Chapter 2 - Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics; Chapter 3 - Review of Numerical Methods for Technology Computer Aided Design (TCAD); Chapter 4 - Device Simulation Using ISE-TCAD; Chapter 5 - Device Simulation Using Silvaco ATLAS Tool; Chapter 6 - Study of Deep Sub-Micron VLSI MOSFETs through TCAD; Chapter 7 - MOSFET Characterization for VLSI Circuit Simulation; Chapter 8 - Process Simulation of a MOSFET Using TSUPREM-4 and Medici; Back Cover

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