Technology computer aided design simulation for VLSI MOSFET

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...

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Bibliographic Details
Other Authors: Sarkar, Chandan Kumar, editor of compilation (editor of compilation)
Format: eBook
Language:Inglés
Published: Boca Raton : Taylor & Francis 2013.
Subjects:
See on Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009628837406719
Description
Summary:"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--
Item Description:Description based upon print version of record.
Physical Description:1 online resource (445 p.)
Bibliography:Includes bibliographical references and index.
ISBN:9781315216454
9781466512665