Technology computer aided design simulation for VLSI MOSFET
"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and co...
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
Taylor & Francis
2013.
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009628837406719 |
| Sumario: | "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- |
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| Notas: | Description based upon print version of record. |
| Descripción Física: | 1 online resource (445 p.) |
| Bibliografía: | Includes bibliographical references and index. |
| ISBN: | 9781315216454 9781466512665 |
