Compact models for integrated circuit design : conventional transistors and beyond

Compact models for integrated circuit design conventional transistors and beyond

This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS...

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Detalles Bibliográficos
Otros Autores: Saha, Samar K., author (author)
Formato: Electrónico
Idioma:Inglés
Publicado: Boca Raton, Florida : CRC Press, Taylor & Francis Group [2016]
Edición:1st edition
Materias:
Integrated circuits > Mathematical models.
Integrated circuits > Computer-aided design.
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009428240306719
Tabla de Contenidos:
  • 1. Introduction to compact models
  • 2. Review of basic device physics
  • 3. Metal-oxide-semiconductor system
  • 4. Large geometry MOSFET compact models
  • 5. Compact models for small geometry MOSFETs
  • 6. MOSFET capacitance models
  • 7. Compact MOSFET models for RF applications
  • 8. Modeling process variability in scaled MOSFETs
  • 9. Compact models for ultrathin body FETs
  • 10. Beyond-CMOS transistor models : tunnel FETs
  • 11. Bipolar junction transistor compact models
  • 12. Compact model library for circuit simulation.

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