Compact models for integrated circuit design conventional transistors and beyond
This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS...
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| Formato: | Electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton, Florida :
CRC Press, Taylor & Francis Group
[2016]
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| Edición: | 1st edition |
| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009428240306719 |
| Sumario: | This modern treatise on compact models for circuit computer-aided design (CAD) presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models. Featuring exercise problems at the end of each chapter and extensive references at the end of the book, the text supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices. It ensures even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts. |
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| Notas: | Description based upon print version of record. |
| Descripción Física: | 1 online resource (537 p.) |
| Bibliografía: | Includes bibliographical references and index. |
| ISBN: | 9781351831079 9781315215181 9781482240672 |
