Electromigration in metals fundamentals to nano-interconnects

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through...

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Detalles Bibliográficos
Otros Autores: Ho, P. S., autor (autor), Hu, Chao-Kun, 1946- autor, Gall, Martin, autor, Sukharev, Valeriy, 1952- autor
Formato: Libro electrónico
Idioma:Inglés
Publicado: Cambridge ; New York, NY : Cambridge University Pres 2022.
Colección:CUP ebooks.
Acceso en línea:Conectar con la versión electrónica
Ver en Universidad de Navarra:https://innopac.unav.es/record=b46428872*spi
Tabla de Contenidos:
  • Introduction to electromigration
  • Fundamentals of electromigration
  • Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects
  • Stress evolution and damage formation in confined metal lines under electric stressing
  • Electromigration in Cu interconnect structures
  • Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure
  • Massive scale statistical studies for electromigration
  • Assessment of electromigration damage in large on-chip power grids.