Physics and technology of crystalline oxide semiconductor CAAC-IGZO Fundamentals Fundamentals /
Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium-gallium-zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis alig...
| Otros Autores: | , |
|---|---|
| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Chichester, UK ; Hoboken, NJ :
John Wiley & Sons
2017.
|
| Colección: | Wiley ebooks.
|
| Acceso en línea: | Conectar con la versión electrónica |
| Ver en Universidad de Navarra: | https://innopac.unav.es/record=b40614499*spi |
Tabla de Contenidos:
- Layered compounds in the In2O3-Ga2O3-ZnO system and related compounds in the ternary system
- Systematic view of crystalline CAAC-IGZO and other crystalline IGZO thin films
- Fundamental properties of IGZO
- CAAC-IGZO field-effect transistor
- Device application using CAAC-IGZO.
