Silicon-germanium heterojunction bipolar transistors
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his...
Autor principal: | |
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Otros Autores: | |
Formato: | Libro electrónico |
Idioma: | Inglés |
Publicado: |
Boston, MA :
Artech House
2003.
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Colección: | EBSCO Academic eBook Collection Complete.
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Acceso en línea: | Conectar con la versión electrónica |
Ver en Universidad de Navarra: | https://innopac.unav.es/record=b3853907x*spi |
Sumario: | This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT. |
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Descripción Física: | xviii, 570 p. : il |
Formato: | Forma de acceso: World Wide Web. |
Bibliografía: | Incluye referencias bibliográficas e índice. |
ISBN: | 9781580535991 |