Silicon-germanium heterojunction bipolar transistors

This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, his...

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Detalles Bibliográficos
Autor principal: Cressler, John D. (-)
Otros Autores: Niu, Guofu
Formato: Libro electrónico
Idioma:Inglés
Publicado: Boston, MA : Artech House 2003.
Colección:EBSCO Academic eBook Collection Complete.
Acceso en línea:Conectar con la versión electrónica
Ver en Universidad de Navarra:https://innopac.unav.es/record=b3853907x*spi
Descripción
Sumario:This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Descripción Física:xviii, 570 p. : il
Formato:Forma de acceso: World Wide Web.
Bibliografía:Incluye referencias bibliográficas e índice.
ISBN:9781580535991