Integrated power devices and TCAD simulation
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and pro...
| Otros Autores: | , , , |
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| Formato: | Libro electrónico |
| Idioma: | Inglés |
| Publicado: |
Boca Raton :
CRC Press
[2014]
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| Colección: | Devices, Circuits, and Systems
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| Materias: | |
| Ver en Biblioteca Universitat Ramon Llull: | https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009634730706719 |
Tabla de Contenidos:
- CONTENTS; Preface; About the Authors; Chapter 1 Power Electronics, the Enabling Green Technology; 1.1 Introduction to Power Electronics; 1.2 History of Power Electronics; 1.3 DC/DC Converters; 1.4 Linear Voltage Regulators; 1.5 Switched Capacitor DC/DC Converters (Charge Pumps); 1.6 Switched Mode DC/DC Converters; 1.7 Comparison between Linear Regulators, Charge Pumps, and SwitchedRegulators; 1.8 Topologies for Nonisolated DC/DC Switched Converters; 1.9 Topologies for Isolated Switching Converters; 1.10 SPICE Circuit Simulation; 1.11 Power Management Systems for Battery-Powered Devices
- 1.12 SummaryChapter 2 Power Converters and Power Management ICs; 2.1 Dynamic Voltage Scaling for VLSI Power Management; 2.2 Integrated DC/DC Converters; 2.3 Summary; Chapter 3 Semiconductor Industry and More than Moore; 3.1 Semiconductor Industry; 3.2 History of the Semiconductor Industry; 3.3 Food Chain Pyramid of the Semiconductor Industry; 3.4 Semiconductor Companies; 3.5 More than Moore; Chapter 4 Smart Power IC Technology; 4.1 Smart Power IC Technology Basics; 4.2 Smart Power IC Technology: Historical Perspective; 4.3 Smart Power IC Technology: Industrial Perspective
- 4.4 Smart Power IC Technology: Technological PerspectiveChapter 5 Introduction to TCAD Process Simulation; 5.1 Overview; 5.2 Mesh Setup and Initialization; 5.3 Ion Implantation; 5.4 Deposition; 5.5 Oxidation; 5.6 Etching; 5.7 Diffusion; 5.8 Segregation; 5.9 Process Simulator Models Calibration; 5.10 Introduction to 3D TCAD Process Simulation; 5.11 GPU Simulation; Chapter 6 Introduction to TCAD Device Simulation; 6.1 Overview; 6.2 Basics about Device Simulation; 6.3 Physical Models; 6.4 AC Analysis; 6.5 Trap Model in TCAD Simulation; 6.6 Quantum Tunneling
- 6.7 Device Simulator Models CalibrationChapter 7 Power IC Process Flow with TCAD Simulation; 7.1 Overview; 7.2 A Mock-Up Power IC Process Flow; 7.3 Smart Power IC Process Flow Simulation; Chapter 8 Integrated Power Semiconductor Devices with TCAD Simulation; 8.1 PN Junction Diodes; 8.2 Bipolar Junction Transistors; 8.3 LDMOS; Chapter 9 Integrated Power Semiconductor Devices with 3D TCAD Simulations; 9.1 3D Device Layout Effect; 9.2 3D Simulation of LIGBT; 9.3 Super Junction LDMOS; 9.4 Super Junction Power FinFET; 9.5 Large Interconnect Simulation; Chapter 10 GaN Devices, an Introduction
- 10.1 Compound Materials versus Silicon10.2 Substrate Materials for GaN Devices; 10.3 Polarization Properties of III-Nitride Wurtzite; 10.4 AlGaN/GaN Heterojunction; 10.5 Traps in AlGaN/GaN Structure; 10.6 A Simple AlGaN/GaN HEMT; 10.7 GaN Power HEMT Example I; 10.8 GaN Power HEMT Example II; 10.9 Gate Leakage Simulation of GaN HEMT; 10.10 Market Prospect of Compound Semiconductors for Power Applications; Appendix A: Carrier Statistics; Appendix B: Process Simulation Source Code; Appendix C: Trap Dynamics and AC Analysis; Bibliography
