Compact MOSFET models for VLSI design

Compact MOSFET models for VLSI design

Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design, A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concu...

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Detalles Bibliográficos
Otros Autores: Bhattacharyya, A. B., author (author)
Formato: Libro electrónico
Idioma:Inglés
Publicado: Singapore ; John Wiley & Sons (Asia) c2009.
Edición:1st edition
Materias:
Integrated circuits > Very large scale integration > Design and construction.
Metal oxide semiconductor field-effect transistors > Design and construction.
Ver en Biblioteca Universitat Ramon Llull:https://discovery.url.edu/permalink/34CSUC_URL/1im36ta/alma991009627723506719
Tabla de Contenidos:
  • Semiconductor physics review for MOSFET modeling
  • Ideal metal oxide semiconductor capacitor
  • Non-ideal and non-classical MOS capacitors
  • Long channel MOS transistor
  • The scaled MOS transistor
  • Quasistatic, non-quasistatic, and noise models
  • Quantum phenomena in MOS transistors
  • Non-classical MOSFET structures
  • Appendix A : expression for electric field and potential variation in the semiconductor space charge under the gate
  • Appendix B : features of select compact MOSFET models
  • Appendix C : PSP two-point collocation method.

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